BUK9E6R1-100E Todos los transistores

 

BUK9E6R1-100E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9E6R1-100E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 349 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 120 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 133 nC

Tiempo de elevación (tr): 168 nS

Conductancia de drenaje-sustrato (Cd): 725 pF

Resistencia drenaje-fuente RDS(on): 0.0059 Ohm

Empaquetado / Estuche: I2PAK

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BUK9E6R1-100E Datasheet (PDF)

1.1. buk9e6r1-100e.pdf Size:209K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E6R1-100E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetiti

5.1. buk9e2r3-40e.pdf Size:211K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E2R3-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.2. buk9e1r9-40e.pdf Size:226K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E1R9-40E N-channel 40 V, 1.9 mΩ logic level MOSFET in I²PAK 5 June 2013 Product data sheet 1. General description Logic level N-channel MOSFET in a I2PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche

 5.3. buk9e3r7-60e.pdf Size:210K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E3R7-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.4. buk9e15-60e.pdf Size:207K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E15-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

 5.5. buk9e4r4-80e.pdf Size:213K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E4R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.6. buk9e2r8-60e.pdf Size:211K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E2R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.7. buk9e3r2-40e.pdf Size:214K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E3R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.8. buk9e4r9-60e.pdf Size:208K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E4R9-60E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive a

5.9. buk9e1r6-30e.pdf Size:216K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E1R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.10. buk9e8r5-40e.pdf Size:210K _update_mosfet

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E8R5-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitiv

5.11. buk95 buk96 buk9e06-55b.pdf Size:115K _philips

BUK9E6R1-100E
BUK9E6R1-100E

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compliant 175

5.12. buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf Size:318K _philips

BUK9E6R1-100E
BUK9E6R1-100E

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automo

5.13. buk9e08-55b.pdf Size:339K _philips

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and b

5.14. buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf Size:325K _philips

BUK9E6R1-100E
BUK9E6R1-100E

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automotive

5.15. buk9e06-55a.pdf Size:199K _philips

BUK9E6R1-100E
BUK9E6R1-100E

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and b

5.16. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK9E6R1-100E
BUK9E6R1-100E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS

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