All MOSFET. BUK9E6R1-100E Datasheet

 

BUK9E6R1-100E Datasheet and Replacement


   Type Designator: BUK9E6R1-100E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 349 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 168 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: I2PAK
 

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BUK9E6R1-100E Datasheet (PDF)

 ..1. Size:209K  nxp
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BUK9E6R1-100E

BUK9E6R1-100EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 9.1. Size:358K  philips
buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E6R1-100E

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

 9.2. Size:199K  philips
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BUK9E6R1-100E

BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 9.3. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK9E6R1-100E

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

Datasheet: BUK9E1R6-30E , BUK9E1R9-40E , BUK9E2R3-40E , BUK9E2R8-60E , BUK9E3R2-40E , BUK9E3R7-60E , BUK9E4R4-80E , BUK9E4R9-60E , IRF1010E , BUK9E8R5-40E , BUK9K12-60E , BUK9K134-100E , BUK9K17-60E , BUK9K18-40E , BUK9K25-40E , BUK9K29-100E , BUK9K32-100E .

History: RJK5018DPK | RJK0631JPE | SPU04N60C3 | HY1607PS | 2N65E | UPA2201T1M | DH100P70E

Keywords - BUK9E6R1-100E MOSFET datasheet

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