BUK9E6R1-100E PDF and Equivalents Search

 

BUK9E6R1-100E Specs and Replacement

Type Designator: BUK9E6R1-100E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 349 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 168 nS

Cossⓘ - Output Capacitance: 725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: I2PAK

BUK9E6R1-100E substitution

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BUK9E6R1-100E datasheet

 ..1. Size:209K  nxp
buk9e6r1-100e.pdf pdf_icon

BUK9E6R1-100E

BUK9E6R1-100E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetiti... See More ⇒

 9.1. Size:358K  philips
buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E6R1-100E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr... See More ⇒

 9.2. Size:199K  philips
buk9e06-55a.pdf pdf_icon

BUK9E6R1-100E

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

 9.3. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK9E6R1-100E

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A... See More ⇒

Detailed specifications: BUK9E1R6-30E, BUK9E1R9-40E, BUK9E2R3-40E, BUK9E2R8-60E, BUK9E3R2-40E, BUK9E3R7-60E, BUK9E4R4-80E, BUK9E4R9-60E, IRF9540N, BUK9E8R5-40E, BUK9K12-60E, BUK9K134-100E, BUK9K17-60E, BUK9K18-40E, BUK9K25-40E, BUK9K29-100E, BUK9K32-100E

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