BUK9K45-100E Todos los transistores

 

BUK9K45-100E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9K45-100E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 53 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.47 nS

Cossⓘ - Capacitancia de salida: 113 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: LFPAK56D

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BUK9K45-100E datasheet

 ..1. Size:299K  nxp
buk9k45-100e.pdf pdf_icon

BUK9K45-100E

BUK9K45-100E Dual N-channel TrenchMOS logic level FET 26 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K45-100E

BUK9K32-100E Dual N-channel 100 V, 33 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1

 9.2. Size:294K  nxp
buk9k6r2-40e.pdf pdf_icon

BUK9K45-100E

BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.3. Size:295K  nxp
buk9k18-40e.pdf pdf_icon

BUK9K45-100E

BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated

Otros transistores... BUK9K12-60E , BUK9K134-100E , BUK9K17-60E , BUK9K18-40E , BUK9K25-40E , BUK9K29-100E , BUK9K32-100E , BUK9K35-60E , 13N50 , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E , BUK9K8R7-40E , BUK9Y107-80E , BUK9Y113-100E , BUK9Y11-80E .

History: APT12040L2LL | IPA60R125CP | SUM70N03-09CP

 

 

 

 

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