All MOSFET. BUK9K45-100E Datasheet

 

BUK9K45-100E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9K45-100E
   Marking Code: 94510E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33.5 nC
   trⓘ - Rise Time: 8.47 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: LFPAK56D

 BUK9K45-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9K45-100E Datasheet (PDF)

 ..1. Size:299K  nxp
buk9k45-100e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K45-100EDual N-channel TrenchMOS logic level FET26 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.1. Size:336K  nxp
buk9k32-100e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K32-100EDual N-channel 100 V, 33 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1

 9.2. Size:294K  nxp
buk9k6r2-40e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K6R2-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.3. Size:295K  nxp
buk9k18-40e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K18-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.4. Size:305K  nxp
buk9k29-100e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K29-100EDual N-channel TrenchMOS logic level FET28 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.5. Size:714K  nxp
buk9k5r6-30e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K5R6-30EDual N-channel 30 V, 5.8 m logic level MOSFET2 September 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q

 9.6. Size:336K  nxp
buk9k8r7-40e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K8R7-40EDual N-channel 40 V, 9.4 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q

 9.7. Size:279K  nxp
buk9k12-60e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K12-60EDual N-channel 60 V, 11.5 m logic level MOSFET8 May 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 com

 9.8. Size:724K  nxp
buk9k5r1-30e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K5R1-30EDual N-channel 30 V, 5.3 m logic level MOSFET2 September 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q

 9.9. Size:330K  nxp
buk9k134-100e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K134-100EDual N-channel 100 V, 159 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.10. Size:268K  nxp
buk9k30-80e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K30-80EDual N-channel 80 V, 30 m logic level MOSFET12 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101

 9.11. Size:316K  nxp
buk9k17-60e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K17-60EDual N-channel 60 V, 17 m logic level MOSFET19 March 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 Co

 9.12. Size:244K  nxp
buk9k35-60e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K35-60EDual N-channel 60 V, 35 m logic level MOSFET12 November 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101

 9.13. Size:250K  nxp
buk9k52-60e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K52-60EDual N-channel 60 V, 55 m logic level MOSFET24 February 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101

 9.14. Size:288K  nxp
buk9k89-100e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K89-100EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.15. Size:258K  nxp
buk9k22-80e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K22-80EDual N-channel 80 V, 22 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101

 9.16. Size:339K  nxp
buk9k6r8-40e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K6R8-40EDual N-channel 40 V, 7.2 m logic level MOSFET5 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1

 9.17. Size:263K  nxp
buk9k20-80e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K20-80EDual N-channel 80 V, 20 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101

 9.18. Size:314K  nxp
buk9k25-40e.pdf

BUK9K45-100E
BUK9K45-100E

BUK9K25-40EDual N-channel 40 V, 29 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q10

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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