BUK9K6R8-40E Todos los transistores

 

BUK9K6R8-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9K6R8-40E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 64 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 305 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0061 Ohm
   Paquete / Cubierta: LFPAK56D
     - Selección de transistores por parámetros

 

BUK9K6R8-40E Datasheet (PDF)

 ..1. Size:339K  nxp
buk9k6r8-40e.pdf pdf_icon

BUK9K6R8-40E

BUK9K6R8-40EDual N-channel 40 V, 7.2 m logic level MOSFET5 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1

 7.1. Size:294K  nxp
buk9k6r2-40e.pdf pdf_icon

BUK9K6R8-40E

BUK9K6R2-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 9.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K6R8-40E

BUK9K32-100EDual N-channel 100 V, 33 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1

 9.2. Size:295K  nxp
buk9k18-40e.pdf pdf_icon

BUK9K6R8-40E

BUK9K18-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

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History: RJK005N03T146 | KRF7343 | FDMS3660AS | AUIRF1405ZS-7P | UT20N03 | WPM4801 | S68N08ZRN

 

 
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