BUK9K6R8-40E PDF and Equivalents Search

 

BUK9K6R8-40E Specs and Replacement

Type Designator: BUK9K6R8-40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm

Package: LFPAK56D

BUK9K6R8-40E substitution

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BUK9K6R8-40E datasheet

 ..1. Size:339K  nxp
buk9k6r8-40e.pdf pdf_icon

BUK9K6R8-40E

BUK9K6R8-40E Dual N-channel 40 V, 7.2 m logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1... See More ⇒

 7.1. Size:294K  nxp
buk9k6r2-40e.pdf pdf_icon

BUK9K6R8-40E

BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒

 9.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K6R8-40E

BUK9K32-100E Dual N-channel 100 V, 33 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1... See More ⇒

 9.2. Size:295K  nxp
buk9k18-40e.pdf pdf_icon

BUK9K6R8-40E

BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒

Detailed specifications: BUK9K18-40E, BUK9K25-40E, BUK9K29-100E, BUK9K32-100E, BUK9K35-60E, BUK9K45-100E, BUK9K52-60E, BUK9K6R2-40E, 5N65, BUK9K89-100E, BUK9K8R7-40E, BUK9Y107-80E, BUK9Y113-100E, BUK9Y11-80E, BUK9Y12-100E, BUK9Y12-40E, BUK9Y14-80E

Keywords - BUK9K6R8-40E MOSFET specs

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