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BUK9Y12-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y12-40E

Código: 91240E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 65 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 52 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 9.8 nC

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 169 pF

Resistencia drenaje-fuente RDS(on): 0.01 Ohm

Empaquetado / Estuche: LFPAK56_Power-SO8

Búsqueda de reemplazo de MOSFET BUK9Y12-40E

 

BUK9Y12-40E Datasheet (PDF)

1.1. buk9y12-40e.pdf Size:318K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y12-40E N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

2.1. buk9y12-100e.pdf Size:294K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

 4.1. buk9y14-80e.pdf Size:290K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y14-80E N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetit

4.2. buk9y15-100e.pdf Size:296K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

 4.3. buk9y113-100e.pdf Size:299K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetiti

4.4. buk9y153-100e.pdf Size:652K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 27 June 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repeti

 4.5. buk9y107-80e.pdf Size:312K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y107-80E N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

4.6. buk9y15-60e.pdf Size:343K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y15-60E N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.7. buk9y19-100e.pdf Size:321K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y19-100E N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications • 12 V, 24 V and 48 V Automotive sys

4.8. buk9y11-80e.pdf Size:315K _update_mosfet

BUK9Y12-40E
BUK9Y12-40E

BUK9Y11-80E N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.9. buk9y11-30b.pdf Size:89K _philips

BUK9Y12-40E
BUK9Y12-40E

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 Applic

4.10. buk9y14-40b.pdf Size:189K _philips

BUK9Y12-40E
BUK9Y12-40E

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive cr

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