BUK9Y12-40E Specs and Replacement
Type Designator: BUK9Y12-40E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ -
Output Capacitance: 169 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: LFPAK56
POWER-SO8
- MOSFET ⓘ Cross-Reference Search
BUK9Y12-40E datasheet
..1. Size:318K nxp
buk9y12-40e.pdf 
BUK9Y12-40E N-channel 40 V, 12 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒
6.1. Size:294K nxp
buk9y12-100e.pdf
BUK9Y12-100E N-channel 100 V, 12 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒
6.2. Size:813K nxp
buk9y12-55b.pdf
BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features... See More ⇒
8.1. Size:89K philips
buk9y11-30b.pdf
BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 ... See More ⇒
8.2. Size:189K philips
buk9y14-40b.pdf
BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automoti... See More ⇒
8.3. Size:270K nxp
buk9y1r3-40h.pdf
BUK9Y1R3-40H N-channel 40 V, 1.3 m logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Featur... See More ⇒
8.4. Size:312K nxp
buk9y107-80e.pdf
BUK9Y107-80E N-channel 80 V, 107 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒
8.5. Size:749K nxp
buk9y19-75b.pdf
BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature... See More ⇒
8.6. Size:321K nxp
buk9y19-100e.pdf
BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications 12 V, 24 V and 48 V Automotive sys... See More ⇒
8.7. Size:296K nxp
buk9y15-100e.pdf
BUK9Y15-100E N-channel 100 V, 15 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒
8.8. Size:805K nxp
buk9y104-100b.pdf
BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur... See More ⇒
8.9. Size:299K nxp
buk9y113-100e.pdf
BUK9Y113-100E N-channel 100 V, 113 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetiti... See More ⇒
8.10. Size:315K nxp
buk9y11-80e.pdf
BUK9Y11-80E N-channel 80 V, 11 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒
8.11. Size:637K nxp
buk9y11-30b.pdf
BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible... See More ⇒
8.12. Size:259K nxp
buk9y1r6-40h.pdf
BUK9Y1R6-40H N-channel 40 V, 1.6 m logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Featur... See More ⇒
8.13. Size:735K nxp
buk9y14-40b.pdf
BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut... See More ⇒
8.14. Size:343K nxp
buk9y15-60e.pdf
BUK9Y15-60E N-channel 60 V, 15 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒
8.15. Size:652K nxp
buk9y153-100e.pdf
BUK9Y153-100E N-channel 100 V, 153 m logic level MOSFET in LFPAK56 27 June 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti... See More ⇒
8.16. Size:260K nxp
buk9y1r9-40h.pdf
BUK9Y1R9-40H N-channel 40 V, 1.9 m logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Featur... See More ⇒
8.17. Size:734K nxp
buk9y19-55b.pdf
BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for... See More ⇒
8.18. Size:290K nxp
buk9y14-80e.pdf
BUK9Y14-80E N-channel 80 V,15 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit... See More ⇒
Detailed specifications: BUK9K6R2-40E, BUK9K6R8-40E, BUK9K89-100E, BUK9K8R7-40E, BUK9Y107-80E, BUK9Y113-100E, BUK9Y11-80E, BUK9Y12-100E, AON7506, BUK9Y14-80E, BUK9Y15-100E, BUK9Y153-100E, BUK9Y15-60E, BUK9Y19-100E, BUK9Y21-40E, BUK9Y22-100E, BUK9Y25-60E
Keywords - BUK9Y12-40E MOSFET specs
BUK9Y12-40E cross reference
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