BUK9Y38-100E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9Y38-100E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 137 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0375 Ohm
   Paquete / Cubierta: LFPAK56 POWER-SO8

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BUK9Y38-100E Datasheet (PDF)

..1. Size:311K nxp
buk9y38-100e.pdf

BUK9Y38-100EN-channel 100 V, 38 m logic level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

8.1. Size:665K nxp
buk9y30-75b.pdf

BUK9Y30-75BN-channel TrenchMOS logic level FETRev. 04 10 April 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

8.2. Size:268K nxp
buk9y3r5-40e.pdf

BUK9Y3R5-40EN-channel 40 V, 3.8 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 Compliant Repe

8.3. Size:262K nxp
buk9y3r0-40e.pdf

BUK9Y3R0-40EN-channel 40 V 3.0 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetiti

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