BUK9Y38-100E. Аналоги и основные параметры
Наименование производителя: BUK9Y38-100E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 94.9 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 137 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0375 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK9Y38-100E
- подборⓘ MOSFET транзистора по параметрам
BUK9Y38-100E даташит
buk9y38-100e.pdf
BUK9Y38-100E N-channel 100 V, 38 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive
buk9y30-75b.pdf
BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 10 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature
buk9y3r5-40e.pdf
BUK9Y3R5-40E N-channel 40 V, 3.8 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repe
buk9y3r0-40e.pdf
BUK9Y3R0-40E N-channel 40 V 3.0 m logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetiti
Другие MOSFET... BUK9Y153-100E , BUK9Y15-60E , BUK9Y19-100E , BUK9Y21-40E , BUK9Y22-100E , BUK9Y25-60E , BUK9Y25-80E , BUK9Y29-40E , 5N60 , BUK9Y3R0-40E , BUK9Y3R5-40E , BUK9Y41-80E , BUK9Y43-60E , BUK9Y4R4-40E , BUK9Y4R8-60E , BUK9Y59-60E , BUK9Y65-100E .
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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