BUK9Y4R4-40E Todos los transistores

 

BUK9Y4R4-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9Y4R4-40E
   Código: 94E440
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 26.8 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 422 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: LFPAK56 POWER-SO8

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BUK9Y4R4-40E Datasheet (PDF)

 ..1. Size:297K  nxp
buk9y4r4-40e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y4R4-40EN-channel 40 V, 4.4 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 7.1. Size:298K  nxp
buk9y4r8-60e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y4R8-60EN-channel 60 V, 4.8 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.1. Size:732K  nxp
buk9y40-55b.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y40-55BN-channel TrenchMOS logic level FETRev. 03 22 February 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i

 8.2. Size:344K  nxp
buk9y43-60e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y43-60EN-channel 60 V, 43 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.3. Size:347K  nxp
buk9y41-80e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y41-80EN-channel 80 V, 45 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

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