All MOSFET. BUK9Y4R4-40E Datasheet

 

BUK9Y4R4-40E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9Y4R4-40E
   Marking Code: 94E440
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26.8 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 422 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: LFPAK56 POWER-SO8

 BUK9Y4R4-40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9Y4R4-40E Datasheet (PDF)

 ..1. Size:297K  nxp
buk9y4r4-40e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y4R4-40EN-channel 40 V, 4.4 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 7.1. Size:298K  nxp
buk9y4r8-60e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y4R8-60EN-channel 60 V, 4.8 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.1. Size:732K  nxp
buk9y40-55b.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y40-55BN-channel TrenchMOS logic level FETRev. 03 22 February 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i

 8.2. Size:344K  nxp
buk9y43-60e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y43-60EN-channel 60 V, 43 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.3. Size:347K  nxp
buk9y41-80e.pdf

BUK9Y4R4-40E
BUK9Y4R4-40E

BUK9Y41-80EN-channel 80 V, 45 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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