BUK9Y4R8-60E Todos los transistores

 

BUK9Y4R8-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y4R8-60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 238 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 506 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm

Encapsulados: LFPAK56 POWER-SO8

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BUK9Y4R8-60E datasheet

 ..1. Size:298K  nxp
 buk9y4r8-60e.pdf pdf_icon

BUK9Y4R8-60E

BUK9Y4R8-60E N-channel 60 V, 4.8 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive

 7.1. Size:297K  nxp
 buk9y4r4-40e.pdf pdf_icon

BUK9Y4R8-60E

BUK9Y4R4-40E N-channel 40 V, 4.4 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive

 8.1. Size:732K  nxp
 buk9y40-55b.pdf pdf_icon

BUK9Y4R8-60E

BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i

 8.2. Size:344K  nxp
 buk9y43-60e.pdf pdf_icon

BUK9Y4R8-60E

BUK9Y43-60E N-channel 60 V, 43 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a

MOSTRAR MÁS

Otros transistores... BUK9Y25-80E , BUK9Y29-40E , BUK9Y38-100E , BUK9Y3R0-40E , BUK9Y3R5-40E , BUK9Y41-80E , BUK9Y43-60E , BUK9Y4R4-40E , IRF520 , BUK9Y59-60E , BUK9Y65-100E , BUK9Y6R0-60E , BUK9Y72-80E , BUK9Y7R2-60E , BUK9Y7R6-40E , BUK9Y8R5-80E , BUK9Y8R7-60E .

 

 

 

 

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