All MOSFET. BUK9Y4R8-60E Datasheet

 

BUK9Y4R8-60E MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9Y4R8-60E

Marking Code: 94E860

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 238 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.1 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 53 nS

Drain-Source Capacitance (Cd): 506 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0041 Ohm

Package: LFPAK56_Power-SO8

BUK9Y4R8-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9Y4R8-60E Datasheet (PDF)

1.1. buk9y4r8-60e.pdf Size:298K _update_mosfet

BUK9Y4R8-60E
BUK9Y4R8-60E

BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

3.1. buk9y4r4-40e.pdf Size:297K _update_mosfet

BUK9Y4R8-60E
BUK9Y4R8-60E

BUK9Y4R4-40E N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

 4.1. buk9y43-60e.pdf Size:344K _update_mosfet

BUK9Y4R8-60E
BUK9Y4R8-60E

BUK9Y43-60E N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.2. buk9y41-80e.pdf Size:347K _update_mosfet

BUK9Y4R8-60E
BUK9Y4R8-60E

BUK9Y41-80E N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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