BUK9Y4R8-60E Datasheet. Specs and Replacement

Type Designator: BUK9Y4R8-60E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 238 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 506 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: LFPAK56 POWER-SO8

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BUK9Y4R8-60E datasheet

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BUK9Y4R8-60E

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BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use i... See More ⇒

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BUK9Y43-60E N-channel 60 V, 43 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒

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Detailed specifications: BUK9Y25-80E, BUK9Y29-40E, BUK9Y38-100E, BUK9Y3R0-40E, BUK9Y3R5-40E, BUK9Y41-80E, BUK9Y43-60E, BUK9Y4R4-40E, K3569, BUK9Y59-60E, BUK9Y65-100E, BUK9Y6R0-60E, BUK9Y72-80E, BUK9Y7R2-60E, BUK9Y7R6-40E, BUK9Y8R5-80E, BUK9Y8R7-60E

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