BUK9Y59-60E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y59-60E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 16.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.9 nS

Cossⓘ - Capacitancia de salida: 66 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: LFPAK56 POWER-SO8

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BUK9Y59-60E datasheet

 ..1. Size:314K  nxp
 buk9y59-60e.pdf pdf_icon

BUK9Y59-60E

BUK9Y59-60E N-channel 60 V, 59 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a

 8.1. Size:89K  philips
 buk9y53-100b.pdf pdf_icon

BUK9Y59-60E

BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3

 8.2. Size:814K  nxp
 buk9y58-75b.pdf pdf_icon

BUK9Y59-60E

BUK9Y58-75B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 8.3. Size:638K  nxp
 buk9y53-100b.pdf pdf_icon

BUK9Y59-60E

BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatibl

MOSTRAR MÁS

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