BUK9Y59-60E Todos los transistores

 

BUK9Y59-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y59-60E

Código: 95960E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 16.7 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 6.1 nC

Tiempo de elevación (tr): 9.9 nS

Conductancia de drenaje-sustrato (Cd): 66 pF

Resistencia drenaje-fuente RDS(on): 0.052 Ohm

Empaquetado / Estuche: LFPAK56_Power-SO8

Búsqueda de reemplazo de MOSFET BUK9Y59-60E

 

BUK9Y59-60E Datasheet (PDF)

1.1. buk9y59-60e.pdf Size:314K _update_mosfet

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BUK9Y59-60E

BUK9Y59-60E N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.1. buk9y53-100b.pdf Size:89K _philips

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BUK9Y59-60E

BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 Appli

 5.1. buk9y4r4-40e.pdf Size:297K _update_mosfet

BUK9Y59-60E
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BUK9Y4R4-40E N-channel 40 V, 4.4 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.2. buk9y14-80e.pdf Size:290K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y14-80E N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetit

 5.3. buk9y12-100e.pdf Size:294K _update_mosfet

BUK9Y59-60E
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BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.4. buk9y3r0-40e.pdf Size:262K _update_mosfet

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BUK9Y3R0-40E N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetiti

 5.5. buk9y6r0-60e.pdf Size:299K _update_mosfet

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BUK9Y6R0-60E N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.6. buk9y15-100e.pdf Size:296K _update_mosfet

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BUK9Y59-60E

BUK9Y15-100E N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.7. buk9y29-40e.pdf Size:311K _update_mosfet

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BUK9Y29-40E N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.8. buk9y7r2-60e.pdf Size:319K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y7R2-60E N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 Compliant • Repet

5.9. buk9y113-100e.pdf Size:299K _update_mosfet

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BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetiti

5.10. buk9y65-100e.pdf Size:299K _update_mosfet

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BUK9Y59-60E

BUK9Y65-100E N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.11. buk9y43-60e.pdf Size:344K _update_mosfet

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BUK9Y43-60E N-channel 60 V, 43 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.12. buk9y4r8-60e.pdf Size:298K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.13. buk9y38-100e.pdf Size:311K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y38-100E N-channel 100 V, 38 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.14. buk9y21-40e.pdf Size:292K _update_mosfet

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BUK9Y59-60E

BUK9Y21-40E N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.15. buk9y153-100e.pdf Size:652K _update_mosfet

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BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 27 June 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repeti

5.16. buk9y8r7-60e.pdf Size:345K _update_mosfet

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BUK9Y59-60E

BUK9Y8R7-60E N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.17. buk9y22-100e.pdf Size:348K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y22-100E N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.18. buk9y107-80e.pdf Size:312K _update_mosfet

BUK9Y59-60E
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BUK9Y107-80E N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.19. buk9y8r5-80e.pdf Size:311K _update_mosfet

BUK9Y59-60E
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BUK9Y8R5-80E N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.20. buk9y12-40e.pdf Size:318K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y12-40E N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.21. buk9y25-60e.pdf Size:309K _update_mosfet

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BUK9Y25-60E N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.22. buk9y15-60e.pdf Size:343K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y15-60E N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.23. buk9y3r5-40e.pdf Size:268K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y3R5-40E N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 Compliant • Repe

5.24. buk9y72-80e.pdf Size:317K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y72-80E N-channel 80 V, 78 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.25. buk9y19-100e.pdf Size:321K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y19-100E N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications • 12 V, 24 V and 48 V Automotive sys

5.26. buk9y11-80e.pdf Size:315K _update_mosfet

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BUK9Y59-60E

BUK9Y11-80E N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.27. buk9y25-80e.pdf Size:349K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.28. buk9y41-80e.pdf Size:347K _update_mosfet

BUK9Y59-60E
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BUK9Y41-80E N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

5.29. buk9y7r6-40e.pdf Size:350K _update_mosfet

BUK9Y59-60E
BUK9Y59-60E

BUK9Y7R6-40E N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

5.30. buk9y11-30b.pdf Size:89K _philips

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BUK9Y59-60E

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 Applic

5.31. buk9y14-40b.pdf Size:189K _philips

BUK9Y59-60E
BUK9Y59-60E

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive cr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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