BUK9Y59-60E MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUK9Y59-60E
   Marking Code: 95960E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 16.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 6.1 nC
   trⓘ - Rise Time: 9.9 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: LFPAK56 POWER-SO8

BUK9Y59-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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