All MOSFET. BUK9Y59-60E Datasheet

 

BUK9Y59-60E Datasheet and Replacement


   Type Designator: BUK9Y59-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 16.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9.9 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: LFPAK56 POWER-SO8
 

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BUK9Y59-60E Datasheet (PDF)

 ..1. Size:314K  nxp
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BUK9Y59-60E

BUK9Y59-60EN-channel 60 V, 59 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.1. Size:89K  philips
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BUK9Y59-60E

BUK9Y53-100BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible1.3

 8.2. Size:814K  nxp
buk9y58-75b.pdf pdf_icon

BUK9Y59-60E

BUK9Y58-75BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.3. Size:638K  nxp
buk9y53-100b.pdf pdf_icon

BUK9Y59-60E

BUK9Y53-100BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatibl

Datasheet: BUK9Y29-40E , BUK9Y38-100E , BUK9Y3R0-40E , BUK9Y3R5-40E , BUK9Y41-80E , BUK9Y43-60E , BUK9Y4R4-40E , BUK9Y4R8-60E , IRFB31N20D , BUK9Y65-100E , BUK9Y6R0-60E , BUK9Y72-80E , BUK9Y7R2-60E , BUK9Y7R6-40E , BUK9Y8R5-80E , BUK9Y8R7-60E , BUZ100 .

History: STD30NF03L-1 | STL65N3LLH5 | HAT2280R | SDF4N90 | PSMN1R8-30BL | SFF60P05Z | IRHM9064

Keywords - BUK9Y59-60E MOSFET datasheet

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