BUZ100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ100

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 60 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 800 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: TO-220AB

Búsqueda de reemplazo de MOSFET BUZ100

BUZ100 Datasheet (PDF)

1.1. buz100.pdf Size:122K _update_mosfet

BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 50 V 60 A 0.018 Ω TO-220 AB C67078-S1348-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain

1.2. buz100sl-4.pdf Size:79K _update_mosfet

BUZ 100SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 100SL-4 55 V 7.4 A 0.023 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active ID A TA = 25 °C 7.4 Pulsed drain current

1.3. buz100s.pdf Size:88K _update_mosfet

BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 S 55 V 77 A 0.015 Ω TO-220 AB Q67040-S4001-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

1.4. buz100l.pdf Size:122K _update_mosfet

BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature Pin 1 Pin 2 Pin 3 • also in TO-220 SMD available G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100L 50 V 60 A 0.018 Ω TO-220 AB C67078-S1354-A2 Maximum Ratings Parameter Symbol Values Uni

1.5. buz100.pdf Size:185K _siemens

BUZ 100 SIPMOS � Power Transistor � N channel � Enhancement mode � Avalanche-rated � dv/dt rated � Ultra low on-resistance � 175�C operating temperature � also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 50 V 60 A 0.018 ? TO-220 AB C67078-S1348-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 10

1.6. buz100l.pdf Size:186K _siemens

BUZ 100L SIPMOS � Power Transistor � N channel � Enhancement mode � Avalanche-rated � Logic Level � dv/dt rated � Ultra low on-resistance � 175 �C operating temperature Pin 1 Pin 2 Pin 3 � also in TO-220 SMD available G D S Type VDS ID RDS(on) Package Ordering Code BUZ 100L 50 V 60 A 0.018 ? TO-220 AB C67078-S1354-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain cur

1.7. buz100sl.pdf Size:105K _infineon

BUZ 100SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS � N channel Drain-Source on-state resistance 0.012 RDS(on) ? � Enhancement mode Continuous drain current 70 A ID � Avalanche rated � Logic Level � dv/dt rated � 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ100SL P-TO220-3-1 Q67040-S4000-A2 Tube

1.8. buz100s.pdf Size:107K _infineon

BUZ 100S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS � N channel Drain-Source on-state resistance 0.015 RDS(on) ? � Enhancement mode Continuous drain current 77 A ID � Avalanche rated � dv/dt rated � 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ100S P-TO220-3-1 Q67040-S4001-A2 Tube BUZ100S E3045A

1.9. buz100.pdf Size:229K _inchange_semiconductor

isc N-Channel Mosfet Transistor BUZ100 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.018Ω(Max) DS(on) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABS

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