BUZ100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUZ100
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 800 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO-220AB
BUZ100 Datasheet (PDF)
buz100.pdf
BUZ 100SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 100 50 V 60 A 0.018 TO-220 AB C67078-S1348-A2Maximum RatingsParameter Symbol Values UnitContinuous drain
buz100.pdf
isc N-Channel Mosfet Transistor BUZ100FEATURESStatic Drain-Source On-Resistance: R = 0.018(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABS
buz100s spp77n05.pdf
BUZ 100 SSPP77N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 100 S 55 V 77 A 0.015 TO-220 AB Q67040-S4001-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25
buz100l.pdf
BUZ 100LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Ultra low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 100L 50 V 60 A 0.018 TO-220 AB C67078-S1354-A2Maximum RatingsParameter Symbol Values Uni
buz100sl-4.pdf
BUZ 100SL-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 100SL-4 55 V 7.4 A 0.023 P-DSO-28 C67078-S. . . .- . . Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 7.4Pulsed drain current
buz100sl.pdf
BUZ 100SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.012RDS(on) Enhancement modeContinuous drain current 70 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100SL P-TO220-3-1
buz100s.pdf
BUZ 100SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.015RDS(on) Enhancement modeContinuous drain current 77 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ100S P-TO220-3-1 Q67040-S4001-A2 Tub
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918