BUZ101SL Todos los transistores

 

BUZ101SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ101SL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 55 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 14 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 24 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO-220AB

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BUZ101SL Datasheet (PDF)

1.1. buz101sl.pdf Size:88K _update_mosfet

BUZ101SL
BUZ101SL

BUZ 101 SL SPP20N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 SL 55 V 20 A 0.07 Ω TO-220 AB Q67040-S4012-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain cur

1.2. buz101sl.pdf Size:108K _infineon

BUZ101SL
BUZ101SL

BUZ 101SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.04 RDS(on) ? Enhancement mode Continuous drain current 20 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ101SL P-TO220-3-1 Q67040-S4012-A2 Tube

 3.1. buz101s.pdf Size:68K _update_mosfet

BUZ101SL
BUZ101SL

BUZ 101 S Preliminary data SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 101 S 55 V 22 A 0.06 Ω TO-220 AB Q67040-S4013-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 °C 22 TC

3.2. buz101s.pdf Size:131K _infineon

BUZ101SL
BUZ101SL

BUZ 101S SIPMOS? PowerTransistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.05 RDS(on) ? Enhancement mode Continuous drain current 22 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ101S P-TO220-3-1 Q67040-S4013-A2 Tube BUZ101S E3045A P

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