BUZ103 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: BUZ103

..1. Size:122K siemens
buz103.pdf pdf_icon

BUZ 103 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175 C operating temperature also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 103 50 V 40 A 0.04 TO-220 AB C67078-S1352-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

0.1. Size:185K siemens
buz103al.pdf pdf_icon

BUZ 103AL SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperature Pin 1 Pin 2 Pin 3 also in TO-220 SMD available G D S Type VDS ID RDS(on) Package Ordering Code BUZ 103AL 50 V 35 A 0.05 TO-220 AB C67078-S1357-A2 Maximum Ratings Parameter Symbol Values Unit Co

0.2. Size:77K siemens
buz103s-4.pdf pdf_icon

BUZ 103S-4 Preliminary data SIPMOS Power Transistor Quad-channel Enhancement mode Avalanche-rated dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 103S-4 55 V 5.3 A 0.045 P-DSO-28 C67078-S. . . . -A.. Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active ID A TA = 25 C 5.3 Pulsed drain current one channel active I

0.3. Size:123K infineon
buz103s.pdf pdf_icon

BUZ 103S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.036 RDS(on) Enhancement mode Continuous drain current 31 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ103S P-TO220-3-1 Q67040-S4009-A2 Tu