BUZ103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ103
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 120 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 40 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 70 nS
Conductancia de drenaje-sustrato (Cd): 330 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET BUZ103
BUZ103 Datasheet (PDF)
buz103.pdf
BUZ 103SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 103 50 V 40 A 0.04 TO-220 AB C67078-S1352-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current
buz103al.pdf
BUZ 103ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 103AL 50 V 35 A 0.05 TO-220 AB C67078-S1357-A2Maximum RatingsParameter Symbol Values UnitCo
buz103s-4.pdf
BUZ 103S-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 103S-4 55 V 5.3 A 0.045 P-DSO-28 C67078-S. . . . -A..Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 5.3Pulsed drain current one channel active I
buz103s.pdf
BUZ 103SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.036RDS(on) Enhancement modeContinuous drain current 31 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103S P-TO220-3-1 Q67040-S4009-A2 Tu
buz103sl.pdf
BUZ 103SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.026RDS(on) Enhancement modeContinuous drain current 28 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103SL P-TO220-3-1
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