BUZ103S-4 Todos los transistores

 

BUZ103S-4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ103S-4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: P-DSO-28

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BUZ103S-4 Datasheet (PDF)

 ..1. Size:77K  siemens
buz103s-4.pdf

BUZ103S-4
BUZ103S-4

BUZ 103S-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 103S-4 55 V 5.3 A 0.045 P-DSO-28 C67078-S. . . . -A..Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 5.3Pulsed drain current one channel active I

 7.1. Size:123K  infineon
buz103s.pdf

BUZ103S-4
BUZ103S-4

BUZ 103SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.036RDS(on) Enhancement modeContinuous drain current 31 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103S P-TO220-3-1 Q67040-S4009-A2 Tu

 7.2. Size:121K  infineon
buz103sl.pdf

BUZ103S-4
BUZ103S-4

BUZ 103SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.026RDS(on) Enhancement modeContinuous drain current 28 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103SL P-TO220-3-1

 8.1. Size:185K  siemens
buz103al.pdf

BUZ103S-4
BUZ103S-4

BUZ 103ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 103AL 50 V 35 A 0.05 TO-220 AB C67078-S1357-A2Maximum RatingsParameter Symbol Values UnitCo

 8.2. Size:122K  siemens
buz103.pdf

BUZ103S-4
BUZ103S-4

BUZ 103SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 103 50 V 40 A 0.04 TO-220 AB C67078-S1352-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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