BUZ103S-4 Todos los transistores

 

BUZ103S-4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ103S-4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.4 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5.3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 25 nC

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 230 pF

Resistencia drenaje-fuente RDS(on): 0.045 Ohm

Empaquetado / Estuche: P-DSO-28

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BUZ103S-4 Datasheet (PDF)

1.1. buz103s-4.pdf Size:77K _update_mosfet

BUZ103S-4
BUZ103S-4

BUZ 103S-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 103S-4 55 V 5.3 A 0.045 Ω P-DSO-28 C67078-S. . . . -A.. Maximum Ratings Parameter Symbol Values Unit Continuous drain current one channel active ID A TA = 25 °C 5.3 Pulsed drain current one channel active I

3.1. buz103sl.pdf Size:121K _update_mosfet

BUZ103S-4
BUZ103S-4

BUZ 103SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.026 RDS(on) Ω • Enhancement mode Continuous drain current 28 A ID • Avalanche rated • Logic Level • dv/dt rated • 175 ˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ103SL P-TO220-3-1

3.2. buz103s.pdf Size:123K _infineon

BUZ103S-4
BUZ103S-4

BUZ 103S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.036 RDS(on) ? Enhancement mode Continuous drain current 31 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ103S P-TO220-3-1 Q67040-S4009-A2 Tube BUZ103S E3045A

 3.3. buz103sl.pdf Size:122K _infineon

BUZ103S-4
BUZ103S-4

BUZ 103SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.026 RDS(on) ? Enhancement mode Continuous drain current 28 A ID Avalanche rated Logic Level dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ103SL P-TO220-3-1 Q67040-S4008-A2 Tub

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