BUZ104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ104
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET BUZ104
BUZ104 Datasheet (PDF)
buz104.pdf
BUZ 104SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 50 V 17.5 A 0.1 TO-220 AB C67078-S1353-A2Maximum RatingsParameter Symbol Values UnitContinuous drain curren
buz104.pdf
isc N-Channel Mosfet Transistor BUZ104FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOL
buz104l.pdf
BUZ 104LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 104L 50 V 17.5 A 0.1 TO-220 AB C67078-S1358-A2Maximum RatingsParameter Symbol Values UnitCon
buz104s spp14n05.pdf
BUZ104SBUZ104SBUZ 104 SSPP14N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 S 55 V 13.5 A 0.1 TO-220 AB Q67040-S4007-A2Maximum RatingsParameter Symbol Valu
buz104sl.pdf
BUZ 104SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.064RDS(on) Enhancement modeContinuous drain current 12.5 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104SL P-TO220-3
buz104s.pdf
BUZ 104SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.08RDS(on) Enhancement modeContinuous drain current 13.5 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104S P-TO220-3-1 Q67040-S4007-A2 T
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXTA3N60P
History: IXTA3N60P
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918