Справочник MOSFET. BUZ104

 

BUZ104 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ104
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для BUZ104

 

 

BUZ104 Datasheet (PDF)

 ..1. Size:131K  siemens
 buz104.pdf

BUZ104 BUZ104

BUZ 104SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 50 V 17.5 A 0.1 TO-220 AB C67078-S1353-A2Maximum RatingsParameter Symbol Values UnitContinuous drain curren

 ..2. Size:230K  inchange semiconductor
 buz104.pdf

BUZ104 BUZ104

isc N-Channel Mosfet Transistor BUZ104FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)Ultra low on-resistanceFast Switching175 operating temperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOL

 0.1. Size:132K  siemens
 buz104l.pdf

BUZ104 BUZ104

BUZ 104LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 104L 50 V 17.5 A 0.1 TO-220 AB C67078-S1358-A2Maximum RatingsParameter Symbol Values UnitCon

 0.2. Size:91K  siemens
 buz104s spp14n05.pdf

BUZ104 BUZ104

BUZ104SBUZ104SBUZ 104 SSPP14N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 104 S 55 V 13.5 A 0.1 TO-220 AB Q67040-S4007-A2Maximum RatingsParameter Symbol Valu

 0.3. Size:129K  infineon
 buz104sl.pdf

BUZ104 BUZ104

BUZ 104SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.064RDS(on) Enhancement modeContinuous drain current 12.5 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104SL P-TO220-3

 0.4. Size:129K  infineon
 buz104s.pdf

BUZ104 BUZ104

BUZ 104SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.08RDS(on) Enhancement modeContinuous drain current 13.5 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ104S P-TO220-3-1 Q67040-S4007-A2 T

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History: IRFB4310G

 

 
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