BUZ111S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 111SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.008RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

BUZ111SLSPP80N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

BUZ 111SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.007RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111SL P-TO220-3-1

BUZ11AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11A 50 V

BUZ11BUZ11FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11 50 V

BUZ11Data Sheet June 1999 File Number 2253.230A, 50V, 0.040 Ohm, N-Channel Power FeaturesMOSFET 30A, 50V[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040(BUZ1field effect transistor designed for applications such as SOA is Power Dissipation Limited1) switching regulators, switching converters, motor drivers, Nanosecond Sw

BUZ 110 SSPP80N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

BUZ 110SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub

BUZ 110SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110SL P-TO220-3-1 Q

BUZ11Data Sheet September 2013 File Number 2253.2FeaturesN-Channel Power MOSFET50V, 30A, 40 m 30A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsre

isc N-Channel Mosfet Transistor BUZ11AFEATURESStatic Drain-Source On-Resistance: R = 0.055(Max)DS(on)Avalanche rugged technologyHigh current capability175 Operating TemperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingSolenoid and relay drivers

isc N-Channel Mosfet Transistor BUZ11FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

isc N-Channel Mosfet Transistor BUZ11S2FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,re