BUZ111S datasheet, подбор замены

 ..1. Size:112K  infineon
 buz111s.pdf 

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

 0.1. Size:77K  siemens
 buz111sl spp80n05l.pdf 

BUZ111SL SPP80N05L SIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

 0.2. Size:101K  infineon
 buz111sl.pdf 

BUZ 111SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1

 9.1. Size:116K  st
 buz11a.pdf 

BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V

 9.2. Size:173K  st
 buz11.pdf 

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V

 9.3. Size:384K  st
 buz11s2 buz11s2fi.pdf 

 9.4. Size:81K  fairchild semi
 buz11.pdf 

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040 (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Sw

 9.5. Size:332K  siemens
 buz11al.pdf 

 9.6. Size:88K  siemens
 buz110s spp80n05.pdf 

BUZ 110 S SPP80N05 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175 C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

 9.7. Size:126K  infineon
 buz110s.pdf 

BUZ 110S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub

 9.8. Size:104K  infineon
 buz110sl.pdf 

BUZ 110SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q

 9.9. Size:218K  onsemi
 buz11.pdf 

BUZ11 Data Sheet September 2013 File Number 2253.2 Features N-Channel Power MOSFET 50V, 30A, 40 m 30A, 50V This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040 field effect transistor designed for applications such as SOA is Power Dissipation Limited switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds re

 9.10. Size:229K  inchange semiconductor
 buz11a.pdf 

isc N-Channel Mosfet Transistor BUZ11A FEATURES Static Drain-Source On-Resistance R = 0.055 (Max) DS(on) Avalanche rugged technology High current capability 175 Operating Temperature High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current,high speed switching Solenoid and relay drivers

 9.11. Size:228K  inchange semiconductor
 buz11.pdf 

isc N-Channel Mosfet Transistor BUZ11 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

 9.12. Size:229K  inchange semiconductor
 buz11s2.pdf 

isc N-Channel Mosfet Transistor BUZ11S2 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,re