BUZ171 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ171
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 40 W
Tensión drenaje-fuente (Vds): 50 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 110 nS
Conductancia de drenaje-sustrato (Cd): 270 pF
Resistencia drenaje-fuente RDS(on): 0.3 Ohm
Empaquetado / Estuche: TO-220AB
Búsqueda de reemplazo de MOSFET BUZ171
BUZ171 Datasheet (PDF)
1.1. buz171.pdf 
Size:119K _update_mosfet
BUZ 171 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C -8 Pulsed drain current IDpuls TC = 25 °C -32 Avalanche energy, single pulse EAS mJ
5.1. buz173.pdf Size:84K _infineon
BUZ 173 SIPMOS Power Transistor P channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 ? TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 ?C -3.6 Pulsed drain current IDpuls TC = 25 ?C -14 Avalanche energy, single pulse EAS mJ ID = -3.6
5.2. buz172.pdf Size:84K _infineon
BUZ 172 SIPMOS Power Transistor P channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 ? TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 37 ?C -5.5 Pulsed drain current IDpuls TC = 25 ?C -22 Avalanche energy, single pulse EAS mJ ID = -5.5
5.3. buz172.pdf Size:259K _inchange_semiconductor
Isc P-Channel MOSFET Transistor BUZ172 ·FEATURES ·With TO-220 package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
