BUZ202 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ202
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 80 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-204AA
Búsqueda de reemplazo de BUZ202 MOSFET
- Selecciónⓘ de transistores por parámetros
BUZ202 datasheet
..2. Size:223K inchange semiconductor
buz202.pdf 
isc N-Channel Mosfet Transistor BUZ202 FEATURES Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela
9.4. Size:336K siemens
buz205.pdf
SIPMOS Power Transistor BUZ 205 N channel Enhancement mode FREDFET Type VDS ID RDS (on) Package 1) Ordering Code BUZ 205 400 V 6.0 A 1.0 TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, TC = 35 C ID 6.0 A Pulsed drain current, TC = 25 C ID puls 24 Drain-source voltage VDS 400 V Drain-gate voltage, RGS = 20 k VDGR 400 Ga
9.5. Size:90K infineon
buz20.pdf
BUZ 20 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 C 13.5 Pulsed drain current IDpuls TC = 25 C 54 Avalanche current,limited by Tjmax IA
9.6. Size:228K inchange semiconductor
buz206.pdf
isc N-Channel Mosfet Transistor BUZ206 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters r . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-S
9.7. Size:229K inchange semiconductor
buz20.pdf
isc N-Channel Mosfet Transistor BUZ20 FEATURES Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay
9.8. Size:223K inchange semiconductor
buz201.pdf
isc N-Channel Mosfet Transistor BUZ201 FEATURES Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela
9.9. Size:228K inchange semiconductor
buz205.pdf
isc N-Channel Mosfet Transistor BUZ205 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters r . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-S
Otros transistores... BUZ110S, BUZ111S, BUZ111SL, BUZ11AL, BUZ12, BUZ12A, BUZ171, BUZ201, IRFP460, BUZ206, BUZ210, BUZ215, BUZ216, BUZ21L, BUZ22, BUZ220, BUZ221
