BUZ202
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUZ202
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 11.5
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 80
ns
Cossⓘ - Выходная емкость: 300
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.5
Ohm
Тип корпуса:
TO-204AA
Аналог (замена) для BUZ202
-
подбор ⓘ MOSFET транзистора по параметрам
BUZ202
Datasheet (PDF)
..2. Size:223K inchange semiconductor
buz202.pdf 

isc N-Channel Mosfet Transistor BUZ202FEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela
9.4. Size:336K siemens
buz205.pdf 

SIPMOS Power Transistor BUZ 205 N channel Enhancement mode FREDFETType VDS ID RDS (on) Package 1) Ordering CodeBUZ 205 400 V 6.0 A 1.0 TO-220 AB C67078-A1401-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 35 C ID 6.0 APulsed drain current, TC = 25 C ID puls 24Drain-source voltage VDS 400 VDrain-gate voltage, RGS = 20 k VDGR 400Ga
9.5. Size:90K infineon
buz20.pdf 

BUZ 20SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 13.5Pulsed drain current IDpulsTC = 25 C 54Avalanche current,limited by Tjmax IA
9.6. Size:228K inchange semiconductor
buz206.pdf 

isc N-Channel Mosfet Transistor BUZ206FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S
9.7. Size:229K inchange semiconductor
buz20.pdf 

isc N-Channel Mosfet Transistor BUZ20FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay
9.8. Size:223K inchange semiconductor
buz201.pdf 

isc N-Channel Mosfet Transistor BUZ201FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela
9.9. Size:228K inchange semiconductor
buz205.pdf 

isc N-Channel Mosfet Transistor BUZ205FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S
Другие MOSFET... BUZ110S
, BUZ111S
, BUZ111SL
, BUZ11AL
, BUZ12
, BUZ12A
, BUZ171
, BUZ201
, IRF640
, BUZ206
, BUZ210
, BUZ215
, BUZ216
, BUZ21L
, BUZ22
, BUZ220
, BUZ221
.
History: WMB025N06HG4
| NCE15P25
| STB14NK60Z-1
| HM2301KR
| WTX1012
| WTK9431
| HCD90R450