BUZ210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su Downloaded from Datasheet.su

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: BUZ210 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuo

BUZ 21 LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,l

BUZ 215SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 215 500 V 5 A 1.5 TO-220 AB C67078-A1400-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 500 VVDGRDrain-gate voltageRGS = 20 k 500Continuous drain current ID ATC = 30 C 5Pulsed drain curre

BUZ 21SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR

BUZ 21LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,li

isc N-Channel Mosfet Transistor BUZ211FEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

isc N-Channel Mosfet Transistor BUZ21FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

isc N-Channel Mosfet Transistor BUZ216FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

isc N-Channel Mosfet Transistor BUZ215FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc