Справочник MOSFET. BUZ210

 

BUZ210 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ210
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO-204AA

 Аналог (замена) для BUZ210

 

 

BUZ210 Datasheet (PDF)

 ..1. Size:371K  siemens
buz210 buz211.pdf

BUZ210
BUZ210

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 ..2. Size:25K  sti
buz210.pdf

BUZ210
BUZ210

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: BUZ210 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuo

 9.1. Size:275K  st
buz21.pdf

BUZ210
BUZ210

 9.2. Size:175K  siemens
buz216.pdf

BUZ210
BUZ210

 9.3. Size:113K  siemens
buz21l.pdf

BUZ210
BUZ210

BUZ 21 LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,l

 9.4. Size:116K  siemens
buz215.pdf

BUZ210
BUZ210

BUZ 215SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 215 500 V 5 A 1.5 TO-220 AB C67078-A1400-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 500 VVDGRDrain-gate voltageRGS = 20 k 500Continuous drain current ID ATC = 30 C 5Pulsed drain curre

 9.5. Size:90K  infineon
buz21.pdf

BUZ210
BUZ210

BUZ 21SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR

 9.6. Size:90K  infineon
buz21l.pdf

BUZ210
BUZ210

BUZ 21LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,li

 9.7. Size:223K  inchange semiconductor
buz211.pdf

BUZ210
BUZ210

isc N-Channel Mosfet Transistor BUZ211FEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

 9.8. Size:229K  inchange semiconductor
buz21.pdf

BUZ210
BUZ210

isc N-Channel Mosfet Transistor BUZ21FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

 9.9. Size:228K  inchange semiconductor
buz216.pdf

BUZ210
BUZ210

isc N-Channel Mosfet Transistor BUZ216FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

 9.10. Size:228K  inchange semiconductor
buz215.pdf

BUZ210
BUZ210

isc N-Channel Mosfet Transistor BUZ215FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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