BUZ342 Todos los transistores

 

BUZ342 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 400 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 60 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 220 nS

Conductancia de drenaje-sustrato (Cd): 1450 pF

Resistencia drenaje-fuente RDS(on): 0.01 Ohm

Empaquetado / Estuche: TO-218AA

Búsqueda de reemplazo de MOSFET BUZ342

 

BUZ342 Datasheet (PDF)

1.1. buz342.pdf Size:93K _update_mosfet

BUZ342
BUZ342

 BUZ 342 ® SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω TO-218 AA C67078-S3135-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 150 ˚C 60 P

1.2. buz342.pdf Size:93K _infineon

BUZ342
BUZ342

BUZ 342 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175?C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 342 50 V 60 A 0.01 ? TO-218 AA C67078-S3135-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 150 ?C 60 Pulsed drain current

 5.1. buz346s2.pdf Size:134K _update_mosfet

BUZ342
BUZ342

BUZ 346 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 346 S2 60 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 73 °C 58 Pulsed drain current IDpuls TC = 25 °C 232 Avalanche c

5.2. buz349.pdf Size:369K _update_mosfet

BUZ342
BUZ342

SIPMOS® Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 349 100 V 32 A 0.06 Ω TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, TC = 27 ˚C ID 32 A Pulsed drain current, TC = 25 ˚C ID puls 128 Avalanche current, limited by Tj max IAR 32 Avalanche energy, period

 5.3. buz345.pdf Size:99K _update_mosfet

BUZ342
BUZ342

BUZ 345 ® SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ˚C 41 Pulsed drain current IDpuls TC = 25 ˚C 164 Avalanche current,limited by Tjmax

5.4. buz348.pdf Size:172K _update_mosfet

BUZ342
BUZ342



 5.5. buz34.pdf Size:175K _update_mosfet

BUZ342
BUZ342



5.6. buz341.pdf Size:364K _update_mosfet

BUZ342
BUZ342

SIPMOS® Power Transistor BUZ 341 N channel Enhancement mode Avalanche-rated Type VDS ID RDS (on) Package 1) Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, TC = 28 ˚C ID 33 A Pulsed drain current, TC =25˚C ID puls 132 Avalanche current, limited by Tj max IAR 33 Avalanche energy, periodic

5.7. buz349.pdf Size:94K _infineon

BUZ342
BUZ342

BUZ 349 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 349 100 V 32 A 0.06 ? TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 ?C 32 Pulsed drain current IDpuls TC = 25 ?C 128 Avalanche current,limited by Tjmax IAR 32 Avalan

5.8. buz344.pdf Size:95K _infineon

BUZ342
BUZ342

BUZ 344 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 344 100 V 50 A 0.035 ? TO-218 AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 ?C 50 Pulsed drain current IDpuls TC = 25 ?C 200 Avalanche current,limited by Tjmax IAR 50 Avala

5.9. buz345.pdf Size:93K _infineon

BUZ342
BUZ342

BUZ 345 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 345 100 V 41 A 0.045 ? TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ?C 41 Pulsed drain current IDpuls TC = 25 ?C 164 Avalanche current,limited by Tjmax IAR 41 Avala

5.10. buz341.pdf Size:93K _infineon

BUZ342
BUZ342

BUZ 341 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 341 200 V 33 A 0.07 ? TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ?C 33 Pulsed drain current IDpuls TC = 25 ?C 132 Avalanche current,limited by Tjmax IAR 33 Avalan

5.11. buz34.pdf Size:223K _inchange_semiconductor

BUZ342
BUZ342

isc N-Channel Mosfet Transistor BUZ34 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.2Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for

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