All MOSFET. BUZ342 Datasheet

 

BUZ342 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ342
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 1450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-218AA

 BUZ342 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ342 Datasheet (PDF)

 ..1. Size:93K  infineon
buz342.pdf

BUZ342 BUZ342

BUZ 342 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 342 50 V 60 A 0.01 TO-218 AA C67078-S3135-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 150 C 60P

 9.1. Size:364K  siemens
buz341.pdf

BUZ342 BUZ342

SIPMOS Power Transistor BUZ 341 N channel Enhancement mode Avalanche-ratedType VDS ID RDS (on) Package 1) Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 33 APulsed drain current, TC =25C ID puls 132Avalanche current, limited by Tj max IAR 33Avalanche energy, periodic

 9.2. Size:369K  siemens
buz349.pdf

BUZ342 BUZ342

SIPMOS Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 32 APulsed drain current, TC = 25 C ID puls 128Avalanche current, limited by Tj max IAR 32Avalanche energy, period

 9.3. Size:134K  siemens
buz346s2.pdf

BUZ342 BUZ342

BUZ 346 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 346 S2 60 V 58 A 0.018 TO-218 AA C67078-S3120-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 73 C 58Pulsed drain current IDpulsTC = 25 C 232Avalanche c

 9.4. Size:172K  siemens
buz348.pdf

BUZ342 BUZ342

 9.5. Size:175K  siemens
buz34.pdf

BUZ342 BUZ342

 9.6. Size:99K  infineon
buz345.pdf

BUZ342 BUZ342

BUZ 345 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 345 100 V 41 A 0.045 TO-218 AA C67078-S3121-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 41Pulsed drain current IDpulsTC = 25 C 164Avalanche current,limited by Tjmax

 9.7. Size:93K  infineon
buz341.pdf

BUZ342 BUZ342

BUZ 341 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 33Pulsed drain current IDpulsTC = 25 C 132Avalanche current,limited by Tjmax

 9.8. Size:94K  infineon
buz349.pdf

BUZ342 BUZ342

BUZ 349 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 32Pulsed drain current IDpulsTC = 25 C 128Avalanche current,limited by Tjmax

 9.9. Size:95K  infineon
buz344.pdf

BUZ342 BUZ342

BUZ 344 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 344 100 V 50 A 0.035 TO-218 AA C67078-S3132-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 50Pulsed drain current IDpulsTC = 25 C 200Avalanche current,limited by Tjmax

 9.10. Size:223K  inchange semiconductor
buz34.pdf

BUZ342 BUZ342

isc N-Channel Mosfet Transistor BUZ34FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 3SK135A

 

 
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