BUZ348 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIPMOS Power Transistor BUZ 341 N channel Enhancement mode Avalanche-ratedType VDS ID RDS (on) Package 1) Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 33 APulsed drain current, TC =25C ID puls 132Avalanche current, limited by Tj max IAR 33Avalanche energy, periodic

SIPMOS Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 32 APulsed drain current, TC = 25 C ID puls 128Avalanche current, limited by Tj max IAR 32Avalanche energy, period

BUZ 346 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 346 S2 60 V 58 A 0.018 TO-218 AA C67078-S3120-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 73 C 58Pulsed drain current IDpulsTC = 25 C 232Avalanche c

BUZ 345 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 345 100 V 41 A 0.045 TO-218 AA C67078-S3121-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 41Pulsed drain current IDpulsTC = 25 C 164Avalanche current,limited by Tjmax

BUZ 342 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 342 50 V 60 A 0.01 TO-218 AA C67078-S3135-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 150 C 60P

BUZ 341 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 33Pulsed drain current IDpulsTC = 25 C 132Avalanche current,limited by Tjmax

BUZ 349 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 32Pulsed drain current IDpulsTC = 25 C 128Avalanche current,limited by Tjmax

BUZ 344 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 344 100 V 50 A 0.035 TO-218 AA C67078-S3132-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 50Pulsed drain current IDpulsTC = 25 C 200Avalanche current,limited by Tjmax

isc N-Channel Mosfet Transistor BUZ34FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for