BUZ348 Datasheet and Replacement
Type Designator: BUZ348
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-218AA
BUZ348 substitution
BUZ348 Datasheet (PDF)
buz341.pdf

SIPMOS Power Transistor BUZ 341 N channel Enhancement mode Avalanche-ratedType VDS ID RDS (on) Package 1) Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 33 APulsed drain current, TC =25C ID puls 132Avalanche current, limited by Tj max IAR 33Avalanche energy, periodic
buz349.pdf

SIPMOS Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 32 APulsed drain current, TC = 25 C ID puls 128Avalanche current, limited by Tj max IAR 32Avalanche energy, period
buz346s2.pdf

BUZ 346 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 346 S2 60 V 58 A 0.018 TO-218 AA C67078-S3120-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 73 C 58Pulsed drain current IDpulsTC = 25 C 232Avalanche c
Datasheet: BUZ332A , BUZ338 , BUZ339 , BUZ34 , BUZ341 , BUZ342 , BUZ345 , BUZ346S2 , 12N60 , BUZ349 , BUZ350 , BUZ351 , BUZ355 , BUZ356 , BUZ357 , BUZ358 , BUZ360 .
History: 2SK4080-ZK-E2-AY
Keywords - BUZ348 MOSFET datasheet
BUZ348 cross reference
BUZ348 equivalent finder
BUZ348 lookup
BUZ348 substitution
BUZ348 replacement
History: 2SK4080-ZK-E2-AY



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