BUZ349 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ349
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO-218AA
Búsqueda de reemplazo de MOSFET BUZ349
BUZ349 Datasheet (PDF)
buz349.pdf
SIPMOS Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 32 APulsed drain current, TC = 25 C ID puls 128Avalanche current, limited by Tj max IAR 32Avalanche energy, period
buz349.pdf
BUZ 349 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 32Pulsed drain current IDpulsTC = 25 C 128Avalanche current,limited by Tjmax
buz341.pdf
SIPMOS Power Transistor BUZ 341 N channel Enhancement mode Avalanche-ratedType VDS ID RDS (on) Package 1) Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 33 APulsed drain current, TC =25C ID puls 132Avalanche current, limited by Tj max IAR 33Avalanche energy, periodic
buz346s2.pdf
BUZ 346 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 346 S2 60 V 58 A 0.018 TO-218 AA C67078-S3120-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 73 C 58Pulsed drain current IDpulsTC = 25 C 232Avalanche c
buz345.pdf
BUZ 345 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 345 100 V 41 A 0.045 TO-218 AA C67078-S3121-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 41Pulsed drain current IDpulsTC = 25 C 164Avalanche current,limited by Tjmax
buz342.pdf
BUZ 342 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 342 50 V 60 A 0.01 TO-218 AA C67078-S3135-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 150 C 60P
buz341.pdf
BUZ 341 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 33Pulsed drain current IDpulsTC = 25 C 132Avalanche current,limited by Tjmax
buz344.pdf
BUZ 344 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 344 100 V 50 A 0.035 TO-218 AA C67078-S3132-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 50Pulsed drain current IDpulsTC = 25 C 200Avalanche current,limited by Tjmax
buz34.pdf
isc N-Channel Mosfet Transistor BUZ34FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for
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