Справочник MOSFET. BUZ349

 

BUZ349 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ349
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO-218AA

 Аналог (замена) для BUZ349

 

 

BUZ349 Datasheet (PDF)

 ..1. Size:369K  siemens
buz349.pdf

BUZ349 BUZ349

SIPMOS Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 32 APulsed drain current, TC = 25 C ID puls 128Avalanche current, limited by Tj max IAR 32Avalanche energy, period

 ..2. Size:94K  infineon
buz349.pdf

BUZ349 BUZ349

BUZ 349 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 349 100 V 32 A 0.06 TO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 32Pulsed drain current IDpulsTC = 25 C 128Avalanche current,limited by Tjmax

 9.1. Size:364K  siemens
buz341.pdf

BUZ349 BUZ349

SIPMOS Power Transistor BUZ 341 N channel Enhancement mode Avalanche-ratedType VDS ID RDS (on) Package 1) Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 33 APulsed drain current, TC =25C ID puls 132Avalanche current, limited by Tj max IAR 33Avalanche energy, periodic

 9.2. Size:134K  siemens
buz346s2.pdf

BUZ349 BUZ349

BUZ 346 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 346 S2 60 V 58 A 0.018 TO-218 AA C67078-S3120-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 73 C 58Pulsed drain current IDpulsTC = 25 C 232Avalanche c

 9.3. Size:172K  siemens
buz348.pdf

BUZ349 BUZ349

 9.4. Size:175K  siemens
buz34.pdf

BUZ349 BUZ349

 9.5. Size:99K  infineon
buz345.pdf

BUZ349 BUZ349

BUZ 345 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 345 100 V 41 A 0.045 TO-218 AA C67078-S3121-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 41Pulsed drain current IDpulsTC = 25 C 164Avalanche current,limited by Tjmax

 9.6. Size:93K  infineon
buz342.pdf

BUZ349 BUZ349

BUZ 342 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperaturePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 342 50 V 60 A 0.01 TO-218 AA C67078-S3135-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 150 C 60P

 9.7. Size:93K  infineon
buz341.pdf

BUZ349 BUZ349

BUZ 341 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 341 200 V 33 A 0.07 TO-218 AA C67078-S3128-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 33Pulsed drain current IDpulsTC = 25 C 132Avalanche current,limited by Tjmax

 9.8. Size:95K  infineon
buz344.pdf

BUZ349 BUZ349

BUZ 344 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 344 100 V 50 A 0.035 TO-218 AA C67078-S3132-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 50Pulsed drain current IDpulsTC = 25 C 200Avalanche current,limited by Tjmax

 9.9. Size:223K  inchange semiconductor
buz34.pdf

BUZ349 BUZ349

isc N-Channel Mosfet Transistor BUZ34FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top