BUZ358 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ358
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 125 W
Tensión drenaje-fuente (Vds): 1000 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 4.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 100 nS
Conductancia de drenaje-sustrato (Cd): 170 pF
Resistencia drenaje-fuente RDS(on): 2.6 Ohm
Empaquetado / Estuche: TO-218AA
Búsqueda de reemplazo de MOSFET BUZ358
BUZ358 Datasheet (PDF)
1.1. buz357 buz358.pdf 
Size:474K _update_mosfet
SIPMOS® Power Transistors BUZ 357 BUZ 358 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 357 1000 V 5.1 A 2.0 Ω TO-218 AA C67078-S3110-A2 BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol BUZ Unit 357 358 Continuous drain current, TC = 25 ˚C ID 5.1 4.5 A Pulsed drain current, TC = 25 ˚C ID p
1.2. buz358.pdf Size:68K _siemens
BUZ 358 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 ? TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 5.1 Avalan
5.1. buz350.pdf Size:106K _update_mosfet
BUZ 350 ® SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 350 200 V 22 A 0.12 Ω TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 ˚C 22 Pulsed drain current IDpuls TC = 25 ˚C 88 Avalanche current,limited by Tjmax I
5.2. buz351.pdf Size:182K _update_mosfet
5.3. buz355 buz356.pdf Size:489K _update_mosfet
SIPMOS® Power Transistors BUZ 355 BUZ 356 N channel Enhancement mode 1) Type VDS ID TC RDS (on) Package Ordering Code BUZ 355 800 V 6.0 A 29 ˚C 1.5 Ω TO-218 AA C67078-A3107-A2 BUZ 356 800 V 5.3 A 25 ˚C 2.0 Ω TO-218 AA C67078-A3108-A2 Maximum Ratings Parameter Symbol BUZ Unit 355 356 Continuous drain current ID 6.0 5.3 A Pulsed drain current, TC = 25 ˚C ID puls 21 Drain so
5.4. buz353.pdf Size:264K _st2
5.5. buz354.pdf Size:280K _st2
5.6. buz357.pdf Size:280K _siemens
5.7. buz356.pdf Size:207K _siemens
BUZ 356 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 356 800 V 5.3 A 2 ? TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 5.3 Pulsed drain current IDpuls TC = 25 C 21 Avalanche current,limited by Tjmax IAR 5.1 Avalanche
5.8. buz355.pdf Size:208K _siemens
BUZ 355 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 355 800 V 6 A 1.5 ? TO-218 AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 6 Pulsed drain current IDpuls TC = 25 C 24 Avalanche current,limited by Tjmax IAR 5.1 Avalanche e
5.9. buz350.pdf Size:98K _infineon
BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 350 200 V 22 A 0.12 ? TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 ?C 22 Pulsed drain current IDpuls TC = 25 ?C 88 Avalanche current,limited by Tjmax IAR 22 Avalanc
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
