BUZ358 Datasheet. Specs and Replacement
Type Designator: BUZ358 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO-218AA
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BUZ358 datasheet
buz358.pdf
BUZ 358 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax I... See More ⇒
buz357 buz358.pdf
SIPMOS Power Transistors BUZ 357 BUZ 358 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2 BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol BUZ Unit 357 358 Continuous drain current, TC = 25 C ID 5.1 4.5 A Pulsed drain current, TC = 25 C ID p... See More ⇒
Detailed specifications: BUZ346S2, BUZ348, BUZ349, BUZ350, BUZ351, BUZ355, BUZ356, BUZ357, AON6380, BUZ360, BUZ37, BUZ381, BUZ383, BUZ385, BUZ40B, BUZ44A, BUZ45B
Keywords - BUZ358 MOSFET specs
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