BUZ358 Datasheet and Replacement
Type Designator: BUZ358
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO-218AA
BUZ358 substitution
BUZ358 Datasheet (PDF)
buz358.pdf

BUZ 358SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 4.5Pulsed drain current IDpulsTC = 25 C 18Avalanche current,limited by Tjmax I
buz357 buz358.pdf

SIPMOS Power Transistors BUZ 357BUZ 358 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 357 1000 V 5.1 A 2.0 TO-218 AA C67078-S3110-A2BUZ 358 1000 V 4.5 A 2.6 TO-218 AA C67078-S3111-A2Maximum RatingsParameter Symbol BUZ Unit357 358Continuous drain current, TC = 25 C ID 5.1 4.5 APulsed drain current, TC = 25 C ID p
Datasheet: BUZ346S2 , BUZ348 , BUZ349 , BUZ350 , BUZ351 , BUZ355 , BUZ356 , BUZ357 , RFP50N06 , BUZ360 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , BUZ40B , BUZ44A , BUZ45B .
History: CS3N150VF | QM2413K | AOTF10T60P
Keywords - BUZ358 MOSFET datasheet
BUZ358 cross reference
BUZ358 equivalent finder
BUZ358 lookup
BUZ358 substitution
BUZ358 replacement
History: CS3N150VF | QM2413K | AOTF10T60P



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