NDC7002N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDC7002N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.9 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Corriente continua de drenaje |Id|: 0.51 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 1 nC
Resistencia entre drenaje y fuente RDS(on): 2 Ohm
Paquete / Cubierta: SUPERSOT6
Búsqueda de reemplazo de MOSFET NDC7002N
NDC7002N Datasheet (PDF)
ndc7002n.pdf
March 1996 NDC7002NDual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density process has been designed to m
ndc7002n.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
ndc7002n.pdf
RRUMWUMWUMW NDC7002NUMW NDC7002NSOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density p
ndc7001c.pdf
May 2002 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Q1 0.51 A, 60V. RDS(ON) = 2 @ VGS = 10 V Effect Transistors are produced using Fairchilds RDS(ON) = 4 @ VGS = 4.5 V proprietary, high cell density, DMOS technology. This very high density process has been des
ndc7001c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ndc7003p.pdf
NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field 0.34A, 60 V. RDS(ON) = 5 @ VGS = 10 VEffect Transistors are produced using ON RDS(ON) = 7 @ VGS = 4.5 V Semiconductors proprietary Trench Technology. This very high density process has been designed Low gate
Otros transistores... NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , NDC632P , NDC651N , NDC652P , IRFP260N , NDC7003P , NDH8301N , NDH8302P , NDH8303N , NDH8304P , NDH831N , NDH832P , NDH833N .
