NDC7002N Datasheet. Specs and Replacement

Type Designator: NDC7002N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 0.51 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SUPERSOT6

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NDC7002N datasheet

 ..1. Size:84K  fairchild semi
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NDC7002N

March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field 0.51A, 50V, RDS(ON) = 2 @ VGS=10V effect transistors are produced using Fairchild's High density cell design for low RDS(ON). proprietary, high cell density, DMOS technology. This very high density process has been designed to m... See More ⇒

 ..2. Size:180K  onsemi
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NDC7002N

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒

 ..3. Size:175K  umw-ic
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NDC7002N

R R UMW UMW UMW NDC7002N UMW NDC7002N SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field 0.51A, 50V, RDS(ON) = 2 @ VGS=10V effect transistors are produced using Fairchild's High density cell design for low RDS(ON). proprietary, high cell density, DMOS technology. This very high density p... See More ⇒

 8.1. Size:156K  fairchild semi
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NDC7002N

May 2002 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Q1 0.51 A, 60V. RDS(ON) = 2 @ VGS = 10 V Effect Transistors are produced using Fairchild s RDS(ON) = 4 @ VGS = 4.5 V proprietary, high cell density, DMOS technology. This very high density process has been des... See More ⇒

Detailed specifications: NDB7061, NDB7061L, NDB708A, NDB710A, NDC631N, NDC632P, NDC651N, NDC652P, IRF640N, NDC7003P, NDH8301N, NDH8302P, NDH8303N, NDH8304P, NDH831N, NDH832P, NDH833N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.