BUZ71S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ71S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-220AB

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BUZ71S2 Datasheet (PDF)

..1. Size:137K siemens
buz71s2.pdf

BUZ 71 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 71 S2 60 V 14 A 0.1 TO-220 AB C67078-S1316-A9Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 14Pulsed drain current IDpulsTC = 25 C 56Avalanche curren

9.1. Size:281K st
buz71.pdf

BUZ71N - CHANNEL 50V - 0.085 - 17A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDBUZ71 50 V

9.2. Size:87K st
buz71a.pdf

BUZ71ABUZ71AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ71A 50 V

9.3. Size:382K st
buz71 buz71fi.pdf

9.4. Size:48K intersil
buz71.pdf

BUZ71Data Sheet June 1999 File Number 2418.214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.100field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsrelay dr

9.5. Size:229K inchange semiconductor
buz71.pdf

isc N-Channel Mosfet Transistor BUZ71FEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)a

9.6. Size:231K inchange semiconductor
buz71a.pdf

isc N-Channel Mosfet Transistor BUZ71AFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switching regulators,switching converters,motor drivers ,relay drivers.AB

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