BUZ71S2
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ71S2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-220AB
BUZ71S2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ71S2
Datasheet (PDF)
..1. Size:137K siemens
buz71s2.pdf
BUZ 71 S2Not for new designSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 71 S2 60 V 14 A 0.1 TO-220 AB C67078-S1316-A9Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 14Pulsed drain current IDpulsTC = 25 C 56Avalanche curren
9.1. Size:281K st
buz71.pdf
BUZ71N - CHANNEL 50V - 0.085 - 17A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDBUZ71 50 V
9.2. Size:87K st
buz71a.pdf
BUZ71ABUZ71AFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ71A 50 V
9.4. Size:48K intersil
buz71.pdf
BUZ71Data Sheet June 1999 File Number 2418.214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.100field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsrelay dr
9.5. Size:229K inchange semiconductor
buz71.pdf
isc N-Channel Mosfet Transistor BUZ71FEATURESLow RDS(on)SOA is Power Dissipation LimitedNanosecond Switching Speeds100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)a
9.6. Size:231K inchange semiconductor
buz71a.pdf
isc N-Channel Mosfet Transistor BUZ71AFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switching regulators,switching converters,motor drivers ,relay drivers.AB
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