CHM02N6ANGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM02N6ANGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Paquete / Cubierta: D2PAK
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CHM02N6ANGP Datasheet (PDF)
chm02n6angp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N6ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 1.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160
chm02n6gpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N6GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High pow
chm02n6pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N6PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
chm02n7pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM02N7PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 1.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
Otros transistores... C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 , CHM003TGP , HY1906P , CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP , CHM05N65PAGP , CHM05P03NGP .
History: IRF6718L2 | CEP540L | STU3N45K3 | LSC65R650HT | 2SK2007 | IPB051N08N | SM3115NSU
History: IRF6718L2 | CEP540L | STU3N45K3 | LSC65R650HT | 2SK2007 | IPB051N08N | SM3115NSU



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