2SK105 Todos los transistores

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2SK105 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK105

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.25 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 5 V

Corriente continua de drenaje (Id): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 100 Ohm

Empaquetado / Estuche: TO92

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2SK105 Datasheet (PDF)

1.1. 2sk1059-z.pdf Size:277K _update

2SK105
2SK105



1.2. 2sk1052.pdf Size:104K _sanyo

2SK105
2SK105

Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parame

 1.3. 2sk1053.pdf Size:106K _sanyo

2SK105
2SK105

Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parame

1.4. rej03g0906 2sk1056 2sk1057 2sk1058.pdf Size:85K _renesas

2SK105
2SK105

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 1.5. 2sk1059.pdf Size:280K _nec

2SK105
2SK105

1.6. 2sk1058.pdf Size:55K _hitachi

2SK105
2SK105

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.7. 2sk1056 2sk1057 2sk1058.pdf Size:40K _hitachi

2SK105
2SK105

2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057

1.8. 2sk1057.pdf Size:55K _hitachi

2SK105
2SK105

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.9. 2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf Size:53K _interfet

2SK105

Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = – 1.0 µA – 20 – 50 – 30 – 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( )

Otros transistores... 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , IRFZ46N , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 .

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