2SK105 Datasheet and Replacement

Databook.fxp 1/14/99 2:03 PM Page D-2D-2 01/99Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK17 2SK40 2SK59 2SK105JapaneseIFN17 IFN40 IFN59 IFN105InterFETNJ16 NJ16 NJ16 NJ16ProcessUnit N N N NParameters Conditions Limit Channel Channel Channel ChannelVBVGSS IG = 1.0 A 20 50 30 50MinnA 0.10 1.0 1.0 1.0IGSS VGS = ( )

Ordering number:EN3440N-Channel Silicon MOSFET2SK1053Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C[2SK1053]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN3439N-Channel Silicon MOSFET2SK1052Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C[2SK1052]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Ratings at Ta = 25C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1056, 2SK1057, 2SK1058Silicon N-Channel MOS FETApplicationLow frequency power amplifierComplementary pair with 2SJ160, 2SJ161 and 2SJ162Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

isc N-Channel MOSFET Transistor 2SK1053DESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

isc N-Channel MOSFET Transistor 2SK1052DESCRIPTIONDrain Current I =0.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and re