CHM12N10PAGP Todos los transistores

 

CHM12N10PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM12N10PAGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-252

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CHM12N10PAGP Datasheet (PDF)

 ..1. Size:47K  chenmko
chm12n10pagp.pdf

CHM12N10PAGP
CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 9.1. Size:91K  chenmko
chm1203evjgp.pdf

CHM12N10PAGP
CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

 9.2. Size:426K  chenmko
chm1273xgp.pdf

CHM12N10PAGP
CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM1273XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged

 9.3. Size:318K  chenmko
chm1273gp.pdf

CHM12N10PAGP
CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM1273GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small surface mounting type. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* Hi

 9.4. Size:69K  chenmko
chm12p10ngp.pdf

CHM12N10PAGP
CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK )0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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