Справочник MOSFET. CHM12N10PAGP

 

CHM12N10PAGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CHM12N10PAGP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для CHM12N10PAGP

 

 

CHM12N10PAGP Datasheet (PDF)

 ..1. Size:47K  chenmko
 chm12n10pagp.pdf

CHM12N10PAGP CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 9.1. Size:91K  chenmko
 chm1203evjgp.pdf

CHM12N10PAGP CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

 9.2. Size:426K  chenmko
 chm1273xgp.pdf

CHM12N10PAGP CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM1273XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged

 9.3. Size:318K  chenmko
 chm1273gp.pdf

CHM12N10PAGP CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM1273GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small surface mounting type. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* Hi

 9.4. Size:69K  chenmko
 chm12p10ngp.pdf

CHM12N10PAGP CHM12N10PAGP

CHENMKO ENTERPRISE CO.,LTDCHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK )0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top