CHM310GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM310GP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 VQgⓘ - Carga de la puerta: 1.4 nC
trⓘ - Tiempo de subida: 8 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET CHM310GP
CHM310GP Datasheet (PDF)
chm310gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 170 mAmpereAPPLICATION* Servo motor control. * Other switching applications.SOT-23FEATURE* Small flat package. (SOT-23 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturation current capability. (1)(3)CO
chm3128jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3128JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and
chm3120jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3120JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm3178jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3178JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm3172jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3172JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High sat
chm3120pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3120PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918