2SK1060 Todos los transistores

 

2SK1060 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1060

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.22 Ohm

Empaquetado / Estuche: MP3

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2SK1060 Datasheet (PDF)

1.1. 2sk1060-z.pdf Size:299K _update

2SK1060
2SK1060



1.2. 2sk1060.pdf Size:302K _nec

2SK1060
2SK1060

 4.1. 2sk1063.pdf Size:44K _update

2SK1060
2SK1060

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ f

4.2. 2sk1064.pdf Size:44K _update

2SK1060
2SK1060

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ f

 4.3. 2sk1061.pdf Size:293K _toshiba

2SK1060
2SK1060

2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs • Low on resistance: R = 0.6 ? (typ.) DS (ON) • Enhancement-mode • Complementary to 2SJ

4.4. 2sk1062.pdf Size:333K _toshiba

2SK1060
2SK1060

2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit: mm Analog Switching Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = 50 mA D • Low on resistance: R = 0.6 ? (typ.) @ I = 50 mA DS (ON) D • Enhancement

 4.5. 2sk1068.pdf Size:94K _sanyo

2SK1060
2SK1060

Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions Impedance conversion. unit:mm Infrared sensor. 2058 [2SK1068] Features 0.3 Small IGSS. 0.15 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65 0.9 2.0

4.6. 2sk1067.pdf Size:143K _sanyo

2SK1060
2SK1060

Ordering number:EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions Low noise NF=1.8dB typ (f=100MHz). unit:mm High power gain PG=27dB typ (f=100MHz). 2057 Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to be made

4.7. 2sk1066.pdf Size:302K _sanyo

2SK1060
2SK1060

Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions High-frequency general-purpose amplifier. unit:mm AM tuner RF amplifier. 2058 Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 Large ? yfs? . 0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmall-sized packag

4.8. 2sk1069.pdf Size:98K _sanyo

2SK1060
2SK1060

Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency general-purpose amplifiers. unit:mm Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 Adoption of FBET proc

4.9. 2sk1065.pdf Size:42K _sanyo

2SK1060
2SK1060

Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall package facilitates miniaturization in end unit:mm products. 2057A Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Gate 2 : Drain 3 : Source SANYO : MCP Specification

Otros transistores... 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , 2SK105 , 2SK1059 , IRF1404 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 , 2SK1178 , 2SK1179 .

 

 
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