2SK1060 Datasheet. Specs and Replacement
Type Designator: 2SK1060 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO252
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2SK1060 substitution
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2SK1060 datasheet
2sk1061.pdf
2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 0.6 (typ.) DS (ON) Enhancement-mode Complementary to 2... See More ⇒
2sk1062.pdf
2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit mm Analog Switching Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance R = 0.6 (typ.) @ I = 50 mA DS (ON) D Enhanceme... See More ⇒
Detailed specifications: 2SK1000, 2SK1006-01MR, 2SK1007-01, 2SK1013-01, 2SK1017, 2SK1019, 2SK105, 2SK1059, IRF640N, 2SK1109, 2SK1122, 2SK1123, 2SK1132, 2SK1133, 2SK1177, 2SK1178, 2SK1179
Keywords - 2SK1060 MOSFET specs
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